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參數(shù)資料
| 型號： | BTH151S-650R |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SCR |
| 封裝： | BTH151S-650R<SOT428 (DPAK)|<<http://www.nxp.com/packages/SOT428.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 116K |
| 代理商： | BTH151S-650R |
Semiconductors
Product specification
Thyristor
High Repetitive Surge
BTH151S-650R
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated thyristor in a plastic envelope,
suitable for surface mounting, intended for
use
in
applications
bidirectionalblockingvoltagecapabilityand
high thermal cycling performance. This
thyristor
has
a
high
specification which makes it suitable for
applications where high inrush currents or
stall currents are likely to occur on a
repetitive basis.
SYMBOL
PARAMETER
MAX.
UNIT
requiring
high
V
DRM
, V
RRM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
Repetitive peak on-state current
650
7.5
12
110
60
V
A
A
A
A
I
T(AV)
I
T(RMS)
I
TSM
I
TRM
repetitive
surge
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DRM
,
V
RRM
Repetitive peak off-state
voltages
half sine wave;
-
1
650
V
I
T(AV)
Average on-state current
T
mb
≤
103 C
-
-
7.5
12
A
A
I
T(RMS)
I
TSM
RMS on-state current
Non-repetitive peak
on-state current
all conduction angles
half sine wave; T
j
= 25 C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10ms,
τ
= 3s, T
mb
≤
45C, no.
of surges = 100k
t = 10 ms
I
TM
= 20 A; I
= 50 mA;
dI
G
/dt = 50 mA/
μ
s
-
-
-
110
121
60
A
A
A
I
TRM
Repetitive peak on-state
current
I
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
I
2
t
dI
T
/dt
-
-
61
50
A
2
s
A/
μ
s
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
-
2
5
5
5
A
V
V
W
W
C
C
over any 20 ms period
0.5
150
125
-40
-
1
2
3
tab
a
k
g
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
March 2001
1
Rev 1.001
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