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參數(shù)資料
| 型號(hào)： | BTA212B800E |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 可控硅| 800V的五（DRM）的| 12A條口（T）的有效值|采用SOT - 404 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | BTA212B800E |
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA212X series B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
triacs in a full pack, plastic envelope
intendedfor usein circuitswhere high
static and dynamic dV/dt and high
dI/dt can occur. These devices will
commutate the full rated rms current
at
the
maximum
temperature, without the aid of a
snubber.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
BTA212X-
500B
500
600B
600
800B
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
V
I
T(RMS)
I
TSM
12
95
12
95
12
95
A
A
rated
junction
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
-
V
I
T(RMS)
full sine wave;
T
≤
56 C
full sine wave;
T
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
12
A
I
TSM
Non-repetitive peak
on-state current
-
-
-
95
105
45
100
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
A
2
s
A/
μ
s
I
GM
V
GM
P
GM
P
G(AV)
-
-
-
-
2
5
5
A
V
W
W
over any 20 ms
period
0.5
T
stg
T
j
Storage temperature
Operating junction
temperature
-40
-
150
125
C
C
T1
T2
G
1 2 3
case
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
September 1997
1
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTA212BSERIESB | Transient Voltage Suppressor Diodes |
| BTA212BSERIESC | Transient Voltage Suppressor Diodes |
| BTA212BSERIESD.EANDF | Transient Voltage Suppressor Diodes |
| BTA212BSERIESDEANDF | Transient Voltage Suppressor Diodes |
| BTA212SERIESB | Transient Voltage Suppressor Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTA212B-800E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
| BTA212B-800E /T3 | 功能描述:雙向可控硅 THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA212B-800E,118 | 功能描述:雙向可控硅 THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA212B-800F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
| BTA212BSERIESB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Three quadrant triacs high commutation |
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