參數(shù)資料
型號(hào): BTA212B-500B
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: 可控硅| 500V五(DRM)的| 12A條口(T)的有效值|采用SOT - 404
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 50K
代理商: BTA212B-500B
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA212X series B
Fig.1. Maximum on-state dissipation, P
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus heatsink temperature T
hs
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
hs
56C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
5
10
15
0
5
10
15
20
= 180
120
90
60
30
BT138
IT(RMS) / A
Ptot / W
Ths(max) / C
125
105
85
65
45
1
-50
0
50
Ths / C
100
150
0
5
10
15
BT138X
56 C
IT(RMS) / A
10us
100us
1ms
T / s
10ms
100ms
10
100
1000
BTA212
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
0.01
0.1
1
10
0
5
10
15
20
25
BT138
surge duration / s
IT(RMS) / A
1
10
Number of cycles at 50Hz
100
1000
0
20
40
60
80
100
BT138
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
September 1997
3
Rev 1.200
相關(guān)PDF資料
PDF描述
BTA212B600D Transient Voltage Suppressor Diodes
BTA212B600E Transient Voltage Suppressor Diodes
BTA212B800E Transient Voltage Suppressor Diodes
BTA212BSERIESB Transient Voltage Suppressor Diodes
BTA212BSERIESC Transient Voltage Suppressor Diodes
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