參數(shù)資料
型號: BTA212-800F
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: Three quadrant triacs guaranteed commutation(三象限雙向確保換向可控硅)
中文描述: 800 V, 12 A, TRIAC, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 3/6頁
文件大?。?/td> 44K
代理商: BTA212-800F
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212 series D, E and F
Fig.1. Maximum on-state dissipation, P
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
mb
99C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
5
10
15
0
5
10
15
20
= 180
120
90
60
30
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
117.5
110
102.5
95
1
-50
0
50
Tmb / C
100
150
0
5
10
15
BT138
99 C
IT(RMS) / A
10us
100us
1ms
T / s
10ms
100ms
10
100
1000
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
0.01
0.1
1
10
0
5
10
15
20
25
surge duration / s
IT(RMS) / A
1
10
Number of cycles at 50Hz
100
1000
0
20
40
60
80
100
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
February 2000
3
Rev 1.000
相關PDF資料
PDF描述
BTA212B-800C Three quadrant triacs high commutation
BTA212B-600C Three quadrant triacs high commutation
BTA212X-500B Three quadrant triacs high commutation(三象限雙向高換向可控硅)
BTA212_SERIES_B Three quadrant triacs high commutation
BTA212-500B TRIAC|500V V(DRM)|12A I(T)RMS|TO-220AB
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