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參數(shù)資料
| 型號： | BTA212-800F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Three quadrant triacs guaranteed commutation(三象限雙向確保換向可控硅) |
| 中文描述： | 800 V, 12 A, TRIAC, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 44K |
| 代理商： | BTA212-800F |
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212 series D, E and F
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
in free air
MIN.
-
-
-
TYP.
-
-
60
MAX.
1.5
2.0
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
...D
MAX.
...E
UNIT
BTA212-
...D
...F
I
GT
Gate trigger current
2
V
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
-
-
-
1.0
2.2
3.3
5
5
5
10
10
10
25
25
25
mA
mA
mA
I
L
Latching current
-
-
-
6
6
9
15
25
25
25
30
30
30
40
40
mA
mA
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
-
3.8
15
25
30
mA
...D, E, F
V
T
V
GT
On-state voltage
Gate trigger voltage
I
T
= 17 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 C
V
D
= V
;
T
j
= 125 C
-
-
1.3
0.7
0.4
1.6
1.5
-
V
V
V
0.25
I
D
Off-state leakage current
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
...E
60
TYP.
...D
30
MAX.
UNIT
BTA212-
...D
...F
70
dV
D
/dt
Critical rate of rise of
off-state voltage
V
DM
= 67% V
DRM(max)
;
T
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 110 C;
I
= 12 A;
dV
/dt = 20V/
μ
s; gate
open circuit
V
DM
= 400 V; T
j
= 110 C;
I
= 12 A;
dV
/dt = 0.1V/
μ
s; gate
open circuit
20
-
V/
μ
s
dI
com
/dt
Critical rate of change of
commutating current
1.8
3.5
5
3
-
A/ms
dI
com
/dt
Critical rate of change of
commutating current
5
16
19
100
-
A/ms
...D, E, F
-
t
gt
Gate controlled turn-on
time
I
TM
= 12 A; V
D
= V
;
I
G
= 0.1 A; dI
G
/dt = 5 A/
μ
s
-
-
2
-
μ
s
2
Device does not trigger in the T2-, G+ quadrant.
February 2000
2
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTA212B-800C | Three quadrant triacs high commutation |
| BTA212B-600C | Three quadrant triacs high commutation |
| BTA212X-500B | Three quadrant triacs high commutation(三象限雙向高換向可控硅) |
| BTA212_SERIES_B | Three quadrant triacs high commutation |
| BTA212-500B | TRIAC|500V V(DRM)|12A I(T)RMS|TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTA212B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
| BTA212B_SERIES_B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Three quadrant triacs high commutation |
| BTA212B_SERIES_D/E_AND_F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Three quadrant triacs guaranteed commutation |
| BTA212B-500B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs high commutation |
| BTA212B-500C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs high commutation |
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