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參數(shù)資料
| 型號(hào)： | BTA212-800E |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 可控硅| 800V的五（DRM）的| 12A條口（T）的有效值| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 50K |
| 代理商： | BTA212-800E |
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA212X series B
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance
junction to heatsink
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN.
TYP.
MAX.
UNIT
-
-
-
-
-
4.0
5.5
-
K/W
K/W
K/W
R
th j-a
Thermal resistance
junction to ambient
55
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
2
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
MIN.
TYP.
MAX.
UNIT
T2+ G+
T2+ G-
T2- G-
2
2
2
18
21
34
50
50
50
mA
mA
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
-
-
-
-
-
-
31
34
30
31
1.3
0.7
0.4
0.1
60
90
60
60
1.6
1.5
-
0.5
mA
mA
mA
mA
V
V
V
mA
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
V
= 12 V; I
GT
= 0.1 A
I
T
= 17 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 C
V
D
= V
DRM(max)
; T
j
= 125 C
0.25
-
I
D
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
dI
com
/dt
Critical rate of change of
commutating current
t
gt
Gate controlled turn-on
time
CONDITIONS
V
= 67% V
; T
= 125 C;
exponential waveform; gate open circuit
V
= 400 V; T
= 125 C; I
= 12 A;
without snubber; gate open circuit
I
TM
= 12 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/
μ
s
MIN.
1000
TYP.
4000
MAX.
-
UNIT
V/
μ
s
-
24
-
A/ms
-
2
-
μ
s
2
Device does not trigger in the T2-, G+ quadrant.
September 1997
2
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTA212B_SERIES_B | Transient Voltage Suppressor Diodes |
| BTA212B-500B | Transient Voltage Suppressor Diodes |
| BTA212B600D | Transient Voltage Suppressor Diodes |
| BTA212B600E | Transient Voltage Suppressor Diodes |
| BTA212B800E | Transient Voltage Suppressor Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTA212-800F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
| BTA212B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
| BTA212B_SERIES_B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Three quadrant triacs high commutation |
| BTA212B_SERIES_D/E_AND_F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Three quadrant triacs guaranteed commutation |
| BTA212B-500B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs high commutation |
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