參數(shù)資料
型號: BTA204S-800E,118
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: Three-quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: SOT428 (DPAK); Container: Tape reel smd
中文描述: 800 V, 4 A, TRIAC, TO-252
封裝: PLASTIC, SC-63, DPAK-3
文件頁數(shù): 7/13頁
文件大?。?/td> 79K
代理商: BTA204S-800E,118
BTA204S_SER_D_E_F_5
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2006
3 of 13
Philips Semiconductors
BTA204S series D, E and F
Three-quadrant triacs guaranteed commutation
α = conduction angle
Fig 1.
Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
001aac660
4
2
6
8
Ptot
(W)
0
IT(RMS) (A)
120
90
60
30
α = 180
0
5
4
125
122
119
116
113
110
107
104
101
23
1
α
Tmb(max)
(
°C)
001aac331
10
20
30
ITSM
(A)
0
n
1
103
102
10
ITSM
t
IT
Tj(init) = 25 °C max
T
相關(guān)PDF資料
PDF描述
BTA204S-800C,118 Three quadrant triacs high commutation - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: SOT428 (DPAK); Container: Tape reel smd
BTA204W-600B,135 Three quadrant triacs high commutation - I<sub>GT</sub>: 50 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600C,135 Three quadrant triacs high commutation - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600D,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600E,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
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