參數(shù)資料
型號(hào): BTA204S-800E,118
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: Three-quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: SOT428 (DPAK); Container: Tape reel smd
中文描述: 800 V, 4 A, TRIAC, TO-252
封裝: PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù): 11/13頁(yè)
文件大小: 79K
代理商: BTA204S-800E,118
BTA204S_SER_D_E_F_5
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2006
7 of 13
Philips Semiconductors
BTA204S series D, E and F
Three-quadrant triacs guaranteed commutation
7.
Dynamic characteristics
Table 6:
Dynamic characteristics
Symbol Parameter
Conditions
BTA204S-600D
BTA204S-600E
BTA204S-800E
BTA204S-600F
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
dVD/dt
rate of rise of
off-state
voltage
VDM = 0.67VDRM(max);
Tj = 125 °C; exponential
waveform; gate open
circuit
20
-
30
-
50
-
V/
s
dIcom/dt
rate of
change of
commutating
current
VDM = 400 V; Tj = 125 °C;
IT(RMS) =4A;
dVcom/dt =10V/s; gate
open circuit
1.1
-
2.1
-
3
-
A/ms
VDM = 400 V; Tj = 125 °C;
IT(RMS) =4A;
dVcom/dt = 0.1 V/s; gate
open circuit
4.5
-
8
-
15
-
A/ms
tgt
gate-
controlled
turn-on time
ITM =12A;
VD =VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/s
-2
-
2
-
2
-
s
(1) T2
G
(2) T2+ G
(3) T2+ G+
Fig 7.
Normalized gate trigger voltage as a function of
junction temperature
Fig 8.
Normalized gate trigger current as a function of
junction temperature
Tj (°C)
50
150
100
50
0
001aac334
0.8
1.2
1.6
VGT
0.4
VGT (25°C)
Tj (°C)
50
150
100
050
001aac677
1
2
3
0
(1)
(2)
(3)
IGT
IGT (25°C)
相關(guān)PDF資料
PDF描述
BTA204S-800C,118 Three quadrant triacs high commutation - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: SOT428 (DPAK); Container: Tape reel smd
BTA204W-600B,135 Three quadrant triacs high commutation - I<sub>GT</sub>: 50 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600C,135 Three quadrant triacs high commutation - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600D,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600E,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
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