參數(shù)資料
型號： BTA204S-800C,118
廠商： NXP SEMICONDUCTORS
元件分類： 晶閘管
英文描述： Three quadrant triacs high commutation - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: SOT428 (DPAK); Container: Tape reel smd
中文描述： 800 V, 4 A, SNUBBERLESS TRIAC, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁數(shù)： 6/13頁
文件大小： 80K
代理商： BTA204S-800C,118
9397 750 14862
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 May 2005
2 of 13
Philips Semiconductors
BTA204S series B and C
Three-quadrant triacs high communication
3.
Ordering information
4.
Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state.
The rate of rise of current should not exceed 6 A/
s.
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BTA204S-600B
DPAK
plastic single-ended surface mounted package; 3 leads (one lead cropped)
SOT428
BTA204S-600C
BTA204S-800B
BTA204S-800C
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
BTA204S-600B; BTA204S-600C
600
V
BTA204S-800B; BTA204S-800C
-
800
V
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 107 °C;
see Figure 4 and 5
-4
A
ITSM
non-repetitive peak on-state current
full sine wave; Tj =25 °C prior to surge;
see Figure 2 and 3
t=20ms
-
25
A
t = 16.7 ms
-
27
A
I2tI2t for fusing
t = 10 ms
-
3.1
A2s
dIT/dt
repetitive rate of rise of on-state
current after triggering
ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s
-
100
A/
s
IGM
peak gate current
-
2
A
VGM
peak gate voltage
-
5
V
PGM
peak gate power
-
5
W
PG(AV)
average gate power
over any 20 ms period
-
0.5
W
Tstg
storage temperature
40
+150
°C
Tj
junction temperature
-
125
°C
相關(guān)PDF資料
PDF描述
BTA204W-600B,135 Three quadrant triacs high commutation - I<sub>GT</sub>: 50 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600C,135 Three quadrant triacs high commutation - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600D,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600E,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600F,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 25 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BTA204S-800E 制造商:NXP Semiconductors 功能描述:TRIAC 4A 800V DPAK 制造商:NXP Semiconductors 功能描述:TRIAC, 4A, 800V, DPAK
BTA204S-800E /T3 功能描述:雙向可控硅 THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB
BTA204S-800E,118 功能描述:雙向可控硅 THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB
BTA204S-800E/T3 制造商:NXP Semiconductors 功能描述:Thyristor TRIAC 800V 27A 3-Pin(2+Tab) DPAK T/R
BTA204S-800E118 制造商:NXP Semiconductors 功能描述:Triac
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