參數(shù)資料
型號(hào): BTA204S-800C,118
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: Three quadrant triacs high commutation - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: SOT428 (DPAK); Container: Tape reel smd
中文描述: 800 V, 4 A, SNUBBERLESS TRIAC, TO-252
封裝: PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù): 12/13頁(yè)
文件大?。?/td> 80K
代理商: BTA204S-800C,118
9397 750 14862
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 May 2005
8 of 13
Philips Semiconductors
BTA204S series B and C
Three-quadrant triacs high communication
7.
Dynamic characteristics
8.
Package information
Refer to mounting instructions for SOT428 (DPAK) package.
Plastic meets requirements of UL94 V-0 at 1
8 inch.
Table 6:
Dynamic characteristics
Tj =25 °C unless otherwise specied.
Symbol Parameter
Conditions
BTA204S-600B
BTA204S-800B
BTA204S-600C
BTA204S-800C
Unit
Min
Typ
Max
Min
Typ
Max
dVD/dt
critical rate of rise of
off-state voltage
VDM = 0.67VDRM(max);
Tj = 125 °C; exponential
waveform; gate open circuit
1000 -
-
1000
V/
s
dIcom/dt critical rate of change of
commutating current
VDM = 400 V; Tj = 125 °C;
IT(RMS) = 4A;
dVcom/dt = 20 V/s; gate open
circuit
6
-
3
-
A/ms
tgt
gate controlled turn-on time ITM = 12 A; VD =VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/s
-2
--2
-
s
相關(guān)PDF資料
PDF描述
BTA204W-600B,135 Three quadrant triacs high commutation - I<sub>GT</sub>: 50 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600C,135 Three quadrant triacs high commutation - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600D,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600E,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600F,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 25 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
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