參數(shù)資料
型號: BT258X_SERIES
廠商: NXP Semiconductors N.V.
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: 晶閘管邏輯電平
文件頁數(shù): 4/6頁
文件大?。?/td> 48K
代理商: BT258X_SERIES
Philips Semiconductors
Product specification
Thyristors
logic level
BT258X series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-hs
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
0
10
20
30
typ
VT / V
IT / A
Tj = 125
°
C
Tj = 25
°
C
max
Vo = 1 V
Rs = 0.04
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
BT150
IL(Tj)
IL(25 C)
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
0.01
0.1
1
10
Zth j-hs (K/W)
tp
P
D
t
with heatsink compound
without heatsink compound
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
IH(Tj)
IH(25 C)
0
50
100
150
1
10
100
1000
Tj / C
dVD/dt (V/us)
RGK = 100 ohms
October 2002
4
Rev 2.000
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