參數(shù)資料
型號： BT151X-650C
廠商： NXP Semiconductors N.V.
元件分類： 參考電壓二極管
英文描述： Thyristor
封裝： BT151X-650C<SOT186A (SOT186A)|<<http://www.nxp.com/packages/SOT186A.html<1<week 32, 2004,;
文件頁數(shù)： 2/8頁
文件大?。?/td> 105K
代理商： BT151X-650C
Semiconductors
Product specification
Thyristors
BT151X series C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated thyristors in a full pack,
plastic envelope, intended for use
in
applications
bidirectional
blocking
capability and high thermal cycling
performance. Typical applications
include motor control, industrial
and domestic lighting, heating and
static switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
requiring
high
BT151X-
500C
500
650C
650
800C
800
voltage
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state
current
V
7.5
12
100
7.5
12
100
7.5
12
100
A
A
A
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500C -650C -800C
500
650
V
DRM
, V
RRM
Repetitive peak off-state
voltages
-
800
V
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
half sine wave; T
≤
69 C
all conduction angles
half sine wave; T
j
= 25 C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 20 A; I
= 50 mA;
dI
G
/dt = 50 mA/
μ
s
-
-
7.5
12
A
A
-
-
-
-
100
110
50
50
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Junction temperature
A
2
s
A/
μ
s
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
2
5
5
A
V
W
W
C
C
over any 20 ms period
0.5
150
125
-40
-
a
k
g
1 2 3
case
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
April 2004
1
Rev 1.000
相關(guān)PDF資料
PDF描述
BT151X-800C Thyristor
BT152-400R Thyristor
BT152-600R Thyristor
BT152-500RT SCR
BT152-800R SCR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BT151X-650C,127 功能描述:SCR Thyristor SCR 650V 1 10A 3-Pin (3+Tab) RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
BT151X-650C127 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
BT151X-650R 功能描述:SCR RAIL SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
BT151X-650R,127 功能描述:SCR RAIL SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
BT151X-800 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors
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