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參數(shù)資料
| 型號： | BT151S-650L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | SCR |
| 中文描述： | 12 A, 650 V, SCR, TO-252AA |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 76K |
| 代理商： | BT151S-650L |
BT151S_SER_L_R_5
NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 05 — 9 October 2006
2 of 13
NXP Semiconductors
BT151S series L and R
Thyristors
3.
Ordering information
4.
Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15A/
μ
s.
Table 2.
Type number
Ordering information
Package
Name
DPAK
Description
plastic single-ended surface-mounted package; 3 leads (one lead cropped) SOT428
Version
BT151S-500L
BT151S-500R
BT151S-650L
BT151S-650R
BT151S-800R
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DRM
repetitive peak off-state voltage
Limiting values
Conditions
BT151S-500L; BT151S-500R
BT151S-650L; BT151S-650R
BT151S-800R
BT151S-500L; BT151S-500R
BT151S-650L; BT151S-650R
BT151S-800R
half sine wave; T
mb
≤
103
°
C;
see
Figure 1
all conduction angles; see
Figure 4
and
5
half sine wave; T
j
= 25
°
C prior to
surge; see
Figure 2
and
3
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 20 A; I
G
= 50 mA;
dI
G
/dt = 50 mA/
μ
s
Min
Max
500
650
800
500
650
800
7.5
Unit
V
V
V
V
V
V
A
[1]
-
[1]
-
-
V
RRM
repetitive peak reverse voltage
[1]
-
[1]
-
-
-
I
T(AV)
average on-state current
I
T(RMS)
RMS on-state current
-
12
A
I
TSM
non-repetitive peak on-state
current
-
-
-
-
120
132
72
50
A
A
A
2
s
A/
μ
s
I
2
t
dI
T
/dt
I
2
t for fusing
rate of rise of on-state current
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
-
-
-
-
40
-
2
5
5
0.5
+150
125
A
V
W
W
°
C
°
C
over any 20 ms period
相關PDF資料 |
PDF描述 |
|---|---|
| BT151S-650R | Thyristor |
| BT151S-800R | SCR |
| BT151U-500C | Thyristor |
| BT151U-650C | SCR |
| BT151U-800C | Thyristor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BT151S-650L /T3 | 功能描述:SCR TAPE 13-THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT151S-650L,118 | 功能描述:雙向可控硅 TAPE 13-THYR AND RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BT151S-650L118 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BT151S-650R | 制造商:NXP Semiconductors 功能描述:Thyristor,650V,12A,BT151S-650R |
| BT151S-650R /T3 | 功能描述:SCR TAPE13 SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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