- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369507 > BT136F-500D DIODE ZENER SINGLE 500mW 13Vz 9.5mA-Izt 0.05 0.5uA-Ir 9.9Vr DO35-GLASS 5K/REEL PDF資料下載
參數(shù)資料
| 型號： | BT136F-500D |
| 英文描述： | DIODE ZENER SINGLE 500mW 13Vz 9.5mA-Izt 0.05 0.5uA-Ir 9.9Vr DO35-GLASS 5K/REEL |
| 中文描述： | 晶閘管產(chǎn)品目錄 |
| 文件頁數(shù)： | 187/224頁 |
| 文件大小： | 2697K |
| 代理商： | BT136F-500D |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁第135頁第136頁第137頁第138頁第139頁第140頁第141頁第142頁第143頁第144頁第145頁第146頁第147頁第148頁第149頁第150頁第151頁第152頁第153頁第154頁第155頁第156頁第157頁第158頁第159頁第160頁第161頁第162頁第163頁第164頁第165頁第166頁第167頁第168頁第169頁第170頁第171頁第172頁第173頁第174頁第175頁第176頁第177頁第178頁第179頁第180頁第181頁第182頁第183頁第184頁第185頁第186頁當前第187頁第188頁第189頁第190頁第191頁第192頁第193頁第194頁第195頁第196頁第197頁第198頁第199頁第200頁第201頁第202頁第203頁第204頁第205頁第206頁第207頁第208頁第209頁第210頁第211頁第212頁第213頁第214頁第215頁第216頁第217頁第218頁第219頁第220頁第221頁第222頁第223頁第224頁
Application Notes
AN1009
2002 Teccor Electronics
Thyristor Product Catalog
AN1009 - 3
http://www.teccor.com
+1 972-580-7777
Double-exponential Impulse Waveform
A double-exponential impulse waveform or waveshape of current
or voltage is designated by a combination of two numbers (t
/t
or
t
r
x t
d
μs). The first number is an exponential rise time (t
r
) or wave
front and the second number is an exponential decay time (t
) or
wave tail. The rise time (t
) is the maximum rise time permitted.
The decay time (t
d
) is the minimum time permitted. Both the t
r
and
the t
are in the same units of time, typically microseconds, des-
ignated at the end of the waveform description as defined by
ANSI/IEEE C62.1-1989.
The rise time (t
) of a current waveform is 1.25 times the time for
the current to increase from 10% to 90% of peak value. See Fig-
ure AN1009.5.
t
r
= Rise Time = 1.25
[t
c
– t
a
]
t
r
= 1.25
[t(0.9 I
PK
) – t(0.1 I
PK
)] = T
1
– T
0
The rise time (t
) of a voltage waveform is 1.67 times the time for
the voltage to increase from 30% to 90% of peak value. (Figure
AN1009.5)
t
r
= Rise Time = 1.67
[t
c
– t
b
]
t
r
= 1.67
[t(0.9 V
PK
) – t(0.3 V
PK
)] = T
1
– T
0
The decay time (t
) of a waveform is the time from virtual zero
(10% of peak for current or 30% of peak for voltage) to the time
at which one-half (50%) of the peak value is reached on the wave
tail. (Figure AN1009.5)
Current Waveform t
d
= Decay Time
= [t(0.5 I
PK
) – t(0.1 I
PK
)] = T
2
– T
0
Voltage Waveform t
d
= Decay Time
= [t(0.5 V
PK
) – t(0.3 V
PK
)] = T
2
– T
0
Figure AN1009.5
Double-exponential Impulse Waveform
Failure Modes of Thyristor
Thyristor failures may be broadly classified as either degrading
or catastrophic. A degrading type of failure is defined as a
change in some characteristic which may or may not cause a cat-
astrophic failure, but could show up as a latent failure. Cata-
strophic failure is when a device exhibits a sudden change in
characteristic that renders it inoperable. To minimize degrading
and catastrophic failures, devices must be operated within maxi-
mum ratings at all times.
Degradation Failures
A significant change of on-state, gate, or switching characteris-
tics is quite rare. The most vulnerable characteristic is blocking
voltage. This type of degradation increases with rising operating
voltage and temperature levels.
Catastrophic Failures
A catastrophic failure can occur whenever the thyristor is oper-
ated beyond its published ratings. The most common failure
mode is an electrical short between the main terminals, although
a triac can fail in a half-wave condition. It is possible, but not
probable, that the resulting short-circuit current could melt the
internal parts of the device which could result in an open circuit.
Failure Causes
Most thyristor failures occur due to exceeding the maximum
operating ratings of the device. Overvoltage or overcurrent oper-
ations are the most probable cause for failure. Overvoltage fail-
ures may be due to excessive voltage transients or may also
occur if inadequate cooling allows the operating temperature to
rise above the maximum allowable junction temperature. Over-
current failures are generally caused by improper fusing or circuit
protection, surge current from load initiation, load abuse, or load
failure. Another common cause of device failure is incorrect han-
dling procedures used in the manufacturing process. Mechanical
damage in the form of excessive mounting torque and/or force
applied to the terminals or leads can transmit stresses to the
internal thyristor chip and cause cracks in the chip which may not
show up until the device is thermally cycled.
Prevention of Failures
Careful selection of the correct device for the application’s oper-
ating parameters and environment will go a long way toward
extending the operating life of the thyristor. Good design practice
should also limit the maximum current through the main terminals
to 75% of the device rating. Correct mounting and forming of the
leads also help ensure against infant mortality and latent failures.
The two best ways to ensure long life of a thyristor is by proper
heat sink methods and correct voltage rating selection for worst
case conditions. Overheating, overvoltage, and surge currents
are the main killers of semiconductors.
Most Common Thyristor Failure Mode
When a thyristor is electrically or physically abused and fails either
by degradation or a catastrophic means, it will short (full-wave or
half-wave) as its normal failure mode. Rarely does it fail open
circuit. The circuit designer should add line breaks, fuses, over-
temperature interrupters or whatever is necessary to protect the
end user and property if a shorted or partially shorted thyristor
offers a safety hazard.
Virtual Start of Wavefront
(Peak Value)
100%
90%
50%
0%
10%
30%
ta
tb
T0
tcT1
T2
Time
P
Decay = e
-
t
1.44 T2
相關PDF資料 |
PDF描述 |
|---|---|
| BT136F-500E | DIODE ZENER SINGLE 500mW 14Vz 9mA-Izt 0.05 0.1uA-Ir 10Vr DO35-GLASS 5K/AMMO |
| BT136F-500F | DIODE, ZENER, 15V |
| BT136F-500G | DIODE ZENER SINGLE 500mW 15Vz 8.5mA-Izt 0.05 0.1uA-Ir 11Vr DO35-GLASS 5K/REEL |
| BT136F-600 | DIODE ZENER SINGLE 500mW 16Vz 7.8mA-Izt 0.05 0.1uA-Ir 12Vr DO35-GLASS 5K/REEL |
| BT136S-500 | DIODE ZENER DUAL COMMON-ANODE 300mW 51Vz 5mA-Izt 0.05 0.1uA-Ir 38 SOT-23 3K/REEL |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BT136F-500E | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
| BT136F-500F | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
| BT136F-500G | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
| BT136F-600 | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
| BT136F-600D | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
發(fā)布緊急采購，3分鐘左右您將得到回復。