參數(shù)資料
型號: BT132SERIESD
英文描述: Triacs logic level
中文描述: 雙向可控硅邏輯電平
文件頁數(shù): 3/6頁
文件大?。?/td> 40K
代理商: BT132SERIESD
Philips Semiconductors
Product specification
Triacs
logic level
BT132 series D
Fig.1. Maximum on-state dissipation, P
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus lead temperature T
lead
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
lead
51C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
0.2
0.4
0.6
0.8
1
1.2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
=180
120
90
60
30
BT132D
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
1
113
101
89
77
65
53
41
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
BT132D
51 C
Tmb / C
IT(RMS) / A
10us
100us
1ms
T / s
10ms
100ms
10
100
1000
BT132D
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
T2- G+ quadrant
dI /dt limit
0.01
0.1
1
10
0
0.5
1
1.5
24
2.5
3
BT132D
surge duration / s
IT(RMS) / A
10
Number of cycles at 50Hz
100
1000
0
BT136
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
5
10
15
20
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
January 1998
3
Rev 1.000
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