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參數(shù)資料
| 型號： | BST122 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | 250 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-89, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 57K |
| 代理商： | BST122 |
April 1995
2
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BST122
DESCRIPTION
P-channel vertical D-MOS transistor
in SOT89 envelope and intended for
use in relay, high-speed and
line-transformer drivers, using
SMD-technology.
FEATURES
Very low R
DS(on)
Direct interface to C-MOS, TTL
High-speed switching
No second breakdown
QUICK REFERENCE DATA
PINNING - SOT89
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Total power dissipation up to T
amb
= 25
°
C
Drain-source ON-resistance
I
D
= 200 mA;
V
GS
= 10 V
V
DS
±
V
GSO
I
D
P
tot
max.
max.
max.
max.
60 V
20 V
0,25 A
1 W
max.
typ.
10
7.5
R
DS(on)
Transfer admittance
I
D
= 200 mA;
V
DS
= 15 V
Y
fs
typ.
125 mS
1
2
3
= source
= drain
= gate
PIN CONFIGURATION
Fig.1 Simplified outline and symbol.
Marking: LN
handbook, halfpage
1
2
3
MAM354
Bottom view
s
d
g
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