參數(shù)資料
型號: BST100
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: P-channel enhancement mode vertical D-MOS transistors(P溝道增強型垂直D-MOS晶體管)
中文描述: 300 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 67K
代理商: BST100
April 1995
5
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BST100
Fig.2 Switching times test circuit.
handbook, halfpage
MBB689
50
VDD =
50 V
ID
0 V
10 V
Fig.3 Input and output waveforms.
handbook, halfpage
MBB690
10 %
90 %
90 %
10 %
ton
toff
OUTPUT
INPUT
Fig.4
Drain current vs ON-resistance.
T
j
= 25
°
C; typical values.
handbook, halfpage
16
4
8
6
ID
(mA)
RDSon (
)
10
12
14
3
10
2
10
MDA776
10 V
7.5 V
6 V
5 V
4.5 V
Fig.5
Transfer characteristics.
T
j
= 25
°
C;
V
DS
= 10 V; typical values.
handbook, halfpage
(A)
0
10
0
0.2
0.4
0.6
0.8
2
4
6
8
MDA777
VGS (V)
相關PDF資料
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