參數(shù)資料
型號： BSS61
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： PNP Darlington transistors
中文描述： 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
文件頁數(shù)： 4/8頁
文件大?。?/td> 52K
代理商： BSS61
1997 May 14
4
Philips Semiconductors
Product specification
PNP Darlington transistors
BSS61; BSS62
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
CES
collector cut-off current
BSS61
BSS62
emitter cut-off current
DC current gain
V
BE
= 0; V
CE
=
60 V
V
BE
= 0; V
CE
=
80 V
I
C
= 0; V
EB
=
4 V
I
C
=
150 mA; V
CE
=
10 V
I
C
=
500 mA; V
CE
=
10 V
1000
2000
50
50
100
1.3
1.3
nA
nA
nA
I
EBO
h
FE
V
CEsat
collector-emitter saturation voltage I
C
=
500 mA; I
B
=
0.5 mA
V
V
I
C
=
500 mA; I
B
=
0.5 mA; T
j
= 200
°
C
V
CEsat
collector-emitter saturation voltage
BSS61
I
C
=
1 A; I
B
=
1 mA
I
C
=
1 A; I
B
=
1 mA; T
j
= 200
°
C
1.6
1.6
V
V
V
CEsat
collector-emitter saturation voltage
BSS62
I
C
=
1 A; I
B
=
4 mA
I
C
=
1 A; I
B
=
4 mA; T
j
= 200
°
C
I
C
=
500 mA; I
B
=
0.5 mA
1.6
1.6
1.9
V
V
V
V
BEsat
V
BEsat
base-emitter saturation voltage
base-emitter saturation voltage
BSS61
BSS62
transition frequency
I
C
=
1 A; I
B
=
1 mA
I
C
=
1 A; I
B
=
4 mA
I
C
=
500 mA; V
CE
=
5 V; f = 100 MHz
200
2.2
2.2
V
V
MHz
f
T
Switching times (between 10% and 90% levels)
t
on
turn-on time
I
Con
=
500 mA; I
Bon
=
0.5 mA;
I
Boff
= 0.5 mA
I
Con
=
1 A; I
Bon
=
1 mA; I
Boff
= 1 mA
I
Con
=
500 mA; I
Bon
=
0.5 mA;
I
Boff
= 0.5 mA
I
Con
=
1 A; I
Bon
=
1 mA; I
Boff
= 1 mA
0.5
μ
s
0.4
0.7
μ
s
μ
s
t
off
turn-off time
1.5
μ
s
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