參數(shù)資料
型號: BSS61
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: PNP Darlington transistors
中文描述: 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
文件頁數(shù): 2/8頁
文件大?。?/td> 52K
代理商: BSS61
1997 May 14
2
Philips Semiconductors
Product specification
PNP Darlington transistors
BSS61; BSS62
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V)
Integrated diode and resistor.
APPLICATIONS
Industrial high gain amplification.
DESCRIPTION
PNP Darlington transistor in a TO-39 metal package.
NPN complements: BSS51 and BSS52.
PINNING
PIN
DESCRIPTION
1
2
3
emitter
base
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
handbook, halfpage
MAM310
2
3
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
BSS61
BSS62
collector-emitter voltage
BSS61
BSS62
collector current (DC)
total power dissipation
open emitter
80
90
V
V
V
CES
V
BE
= 0
2000
200
60
80
1
0.8
5
V
V
A
W
W
I
C
P
tot
T
amb
25
°
C
T
case
25
°
C
I
C
=
500 mA; V
CE
=
10 V
I
C
=
500 mA; V
CE
=
5 V; f = 100 MHz
h
FE
f
T
DC current gain
transition frequency
MHz
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