參數(shù)資料
型號(hào)： BSS138W-7
廠商： DIODES INC
元件分類(lèi)： 功率晶體管
英文描述： RECTIFIER BRIDGE 8A 50V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE
中文描述： 200 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 90K
代理商： BSS138W-7
DS30206 Rev. 3 - 2
1 of 5
BSS138W
www.diodes.com
BSS138W
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
BSS138W
Units
Drain-Source Voltage
V
DSS
50
V
Drain-Gate Voltage (Note 1)
V
DGR
50
V
Gate-Source Voltage
Continuous
V
GSS
20
V
Drain Current (Note 2)
Continuous
I
D
200
mA
Total Power Dissipation (Note 2)
P
d
200
mW
Thermal Resistance, Junction to Ambient
R
JA
625
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Case: SOT-323, Molded Plastic
Case Material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking Code (See Page 2): K38
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
Mechanical Data
A
M
J
L
E
D
B C
H
K
G
G
S
D
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
BV
DSS
I
DSS
I
GSS
50
75
V
μA
V
GS
= 0V, I
D
= 250 A
V
DS
= 50V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
0.5
100
nA
V
GS(th)
R
DS (ON)
g
FS
0.5
1.2
1.4
1.5
3.5
V
V
DS
= V
GS
, I
D
= -250 A
V
GS
= 10V, I
D
= 0.22A
V
DS
=25V, I
D
= 0.2A, f = 1.0KHz
100
mS
C
iss
C
oss
C
rss
50
25
8.0
pF
pF
pF
V
= 10V, V
GS
= 0V
f = 1.0MHz
t
D(ON)
t
D(OFF)
20
20
ns
ns
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50
Note: 1. R
GS
20K
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
3. Short duration test pulse used to minimize self-heating effect.
SOT-323
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
Max
0.25
0.40
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.20
1.40
1.80
2.20
0.0
0.10
0.90
1.00
0.25
0.40
0.10
0.18
0
8
All Dimensions in mm
Source
Gate
Drain
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