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參數(shù)資料
| 型號： | BSS138 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 中文描述： | 200 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 58K |
| 代理商： | BSS138 |
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – MARCH 1996
%
PARTMARKING DETAIL
– SS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
50
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
200
mA
800
mA
Gate-Source Voltage
±
20
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
360
mW
-55 to +150
°C
MIN.
MAX. UNIT
CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
50
V
I
D
=0.25mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.5
1.5
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
I
DSS
100
nA
V
GS
=
±
20V, V
DS
=0V
V
DS
=50V, V
GS
=0
V
DS
=50V, V
GS
=0V, T=125°C
(2)
V
DS
=20V, V
GS
=0
V
GS
=5V,I
D
=200mA
Zero Gate Voltage
Drain Current
0.5
5
100
μ
A
μ
A
nA
Static Drain-Source
On-State Resistance (1)
R
DS(on)
3.5
Forward
Transconductance(1)(2)
g
fs
120
mS
V
DS
=25V,I
D
=200mA
Input Capacitance (2)
C
iss
C
oss
50
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Common Source
Output Capacitance (2)
25
pF
Reverse Transfer
Capacitance (2)
C
rss
8
pF
Turn-On Delay Time (2)(3)
t
d(on)
t
r
t
d(off)
t
f
10
ns
V
DD
≈
30V, I
D
=280mA
Rise Time (2)(3)
10
ns
Turn-Off Delay Time (2)(3)
15
ns
Fall Time (2)(3)
25
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
BSS138
D
G
S
SOT23
3 - 72
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|---|---|
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