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參數(shù)資料
| 型號(hào)： | BSR58LT1 |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 晶體管|場效應(yīng)| N溝道| 8mA的我（直）| SOT - 23封裝 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 105K |
| 代理商： | BSR58LT1 |
BSR58LT1
http://onsemi.com
3
r
R
NOTE 2
The Zero–Gate–Voltage Drain Current (I
DSS
), is the principle de-
terminant of other J-FET characteristics. Figure 10 shows the
relationship of Gate–Source Off Voltage (V
GS(off)
and Drain–
Source On Resistance (r
ds(on)
) to I
DSS
. Most of the devices will
be within
±
10% of the values shown in Figure 10. This data will
be useful in predicting the characteristic variations for a given
part number.
For example:
Unknown
r
ds(on)
and V
GS
range for an J112
The electrical characteristics table indicates that an J112 has
an I
DSS
range of 25 to 75 mA. Figure 10, shows r
ds(on)
= 52 Ohms
for I
DSS
= 25 mA and 30 Ohms for I
DSS
= 75 mA. The corre-
sponding V
GS
values are 2.2 volts and 4.8 volts.
y
C
r
R
r
R
2.0
3.0
5.0
7.0
10
20
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
I
D
, DRAIN CURRENT (mA)
Figure 6. Typical Forward Transfer Admittance
1.0
1.5
2.0
3.0
5.0
7.0
10
15
0.03 0.05
0.1
0.3 0.5
1.0
3.0 5.0
10
30
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Capacitance
200
160
120
80
40
00
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
V
GS
, GATE-SOURCE VOLTAGE (VOLTS)
Figure 8. Effect of Gate–Source Voltage
On Drain–Source Resistance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4-70
-40
-10
T
channel
, CHANNEL TEMPERATURE (
°
C)
20
50
80
110
140
170
Figure 9. Effect of Temperature On
Drain–Source On–State Resistance
J113
J112
J111
T
channel
= 25
°
C
V
DS
= 15 V
C
gs
C
gd
T
channel
= 25
°
C
(C
ds
IS NEGLIGIBLE)
I
DSS
= 10
mA
25
mA
50mA
75mA
100mA
125mA
T
channel
= 25
°
C
I
D
= 1.0 mA
V
GS
= 0
10
I
DSS
, ZERO-GATE-VOLTAGE DRAIN CURRENT (mA)
Figure 10. Effect of I
DSS
On Drain–Source
Resistance and Gate–Source Voltage
20 30
40 50 60
70 80 90
100 110 120 130 140 150
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
100
90
80
70
60
50
40
30
20
10
0
V
T
channel
= 25
°
C
r
DS(on)
@ V
GS
= 0
V
GS(off)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSR58LT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:JFET Chopper Transistor |
| BSR58LT1G | 功能描述:JFET 40V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| BSR58T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 80MA I(DSS) | TO-236 |
| BSR60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| BSR606N H6327 | 功能描述:MOSFET N-KANAL SMALL SIGNAL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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