- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369502 > BSR42 (NXP SEMICONDUCTORS) NPN medium power transistors PDF資料下載
參數(shù)資料
| 型號： | BSR42 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN medium power transistors |
| 中文描述： | 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-243AA |
| 封裝： | PLASTIC, SC-62, TO-243, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 41K |
| 代理商： | BSR42 |
1999 Apr 28
3
Philips Semiconductors
Product specification
NPN medium power transistors
BSR40; BSR41; BSR42; BSR43
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.01.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
93
13
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 100
μ
A; V
CE
= 5 V; note 1
100
50
100
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BSR40; BSR42
BSR41; BSR43
DC current gain
BSR40; BSR42
BSR41; BSR43
DC current gain
BSR40; BSR42
BSR41; BSR43
collector-emitter saturation voltage
10
30
I
C
= 100 mA; V
CE
= 5 V; note 1
40
100
120
300
I
C
= 500 mA; V
CE
= 5 V; note 1
30
50
100
250
500
1
1.2
12
90
V
CEsat
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
mV
mV
V
V
pF
pF
MHz
V
BEsat
base-emitter saturation voltage
C
c
C
e
f
T
collector capacitance
emitter capacitance
transition frequency
Switching times (between 10% and 90% levels)
t
on
t
off
turn-on time
turn-off time
I
Con
= 100 mA; I
Bon
= 5 mA;
I
Boff
=
5 mA
250
1
ns
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BSR42 | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| BSR51 | Transient Voltage Suppressor Diodes |
| BSR56L | Transient Voltage Suppressor Diodes |
| BSR57L | Transient Voltage Suppressor Diodes |
| BSR58L | Transient Voltage Suppressor Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSR42-AR3 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
| BSR42T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | SOT-89 |
| BSR42TA | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BSR43 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 80V 1A SOT89 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 80V, 1A, SOT89 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 80V, 1A, SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:1.35W; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-65C; Operating Temperature ;RoHS Compliant: Yes |
| BSR43 T/R | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。