參數(shù)資料
型號(hào): BSP317Q67000-S94
英文描述: TRANSISTOR MOSFET SMD SOT 223
中文描述: 晶體管MOSFET的貼片采用SOT 223
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 116K
代理商: BSP317Q67000-S94
BSP 317
Data Sheet
2
05.99
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
T
j
T
stg
R
thJA
R
thJS
-55 ... + 150
C
Storage temperature
-55 ... + 150
70
10
Thermal resistance, chip to ambient air
K/W
Therminal resistance, junction-soldering point
1)
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics,
at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= -0.25 mA,
T
j
= 25 C
Gate threshold voltage
V
(BR)DSS
-200
-
-
V
V
GS=
V
DS,
I
D
= -1 mA
Zero gate voltage drain current
V
GS(th)
-0.8
-1.1
-2
V
DS
= -200 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= -200 V,
V
GS
= 0 V,
T
j
= 125 C
V
DS
= -130 V,
V
GS
= 0 V,
T
j
= 25 C
Gate-source leakage current
I
DSS
-
-
-
-
-10
-0.1
-100
-100
-1
μA
nA
V
GS
= -20 V,
V
DS
= 0 V
Drain-Source on-state resistance
I
GSS
-
-10
-100
nA
V
GS
= -10 V,
I
D
= -0.37 A
R
DS(on)
-
3.4
6
相關(guān)PDF資料
PDF描述
BSP318 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.6A I(D) | SOT-223
BSP31 MEDIUM POWER AMPLIFIER
BSP31 Surface mount Si-Epitaxial PlanarTransistors
BSPD25N06S2-40 TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 29A I(D) | TO-252AA
BSPD30N08S2-22 TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 30A I(D) | TO-252AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSP318 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.6A I(D) | SOT-223
BSP318S 制造商:Infineon Technologies 功能描述:Trans MOSFET N-CH 60V 2.6A 4-Pin(3+Tab) SOT-223 Bulk 制造商:Infineon Technologies AG 功能描述:MOSFET N LOGIC SOT-223 制造商:Infineon Technologies AG 功能描述:MOSFET, N, LOGIC, SOT-223 制造商:Infineon Technologies AG 功能描述:MOSFET, N CH, 60V, 2.6A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.6V ;RoHS Compliant: Yes 制造商:Infineon Technologies AG 功能描述:MOSFET N-Channel 60V 2.6A Logic SOT223
BSP318S E6327 功能描述:MOSFET N-CH 60V 2.6A SOT-223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SIPMOS® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
BSP318S L6327 功能描述:MOSFET N-CH 60V 2.6A SMALL SIGNAL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BSP318S 制造商:Infineon Technologies AG 功能描述:MOSFET N LOGIC SOT-223