參數(shù)資料
型號(hào): BSP106
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: INDUCTOR TOROID W/HDR 75UH 15%
中文描述: 425 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 65K
代理商: BSP106
April 1995
6
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP106
Fig.6
Typical transfer characteristic; V
DS
= 10 V;
T
j
= 25
°
C.
handbook, halfpage
0
0.8
0.4
0
2
VGS (V)
ID
(A)
4
8
6
MDA719
Fig.7
Typical on-resistance as a function of drain
current; T
j
= 25
°
C.
handbook, halfpage
(
)
0
4
8
12
16
MDA720
1
10
ID (mA)
10
2
10
3
10
4
VGS = 3 V
4 V
5 V
10 V
Fig.8
Typical capacitances as a function of
drain-source voltage; V
GS
= 0; f = 1 MHz;
T
j
= 25
°
C.
handbook, halfpage
C
(pF)
0
60
40
20
0
5
10
25
20
15
MDA721
VDS (V)
Crss
Ciss
Coss
Fig.9
Temperature coefficient of drain-source
on-resistance;
R
R
DS on
typical R
DS(on)
at 200 mA/10 V.
k
)
at 25
°
C
----------------------------------------------
;
=
handbook, halfpage
50
0
50
k
Tj (
°
C)
150
0.4
2
100
1.6
1.2
0.8
MDA722
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