參數(shù)資料
型號(hào): BS62UV256JI
廠商: BRILLIANCE SEMICONDUCTOR, INC.
英文描述: Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit
中文描述: 超低功率/電壓CMOS SRAM的32K的× 8位
文件頁數(shù): 9/11頁
文件大?。?/td> 331K
代理商: BS62UV256JI
Revision 2.2
April 2001
7
BSI
BS62UV256
R0201-BS62UV256
WRITE CYCLE2 (1,6)
t WC
t CW
(11)
(2)
t WP
t AW
t WHZ
(4,10)
t AS
t DH
t DW
D
IN
D
OUT
WE
CE
ADDRESS
(5)
t DH
(7)
(8)
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals
must be active to initiate a write and any one signal can terminate a write by going inactive.
The data input setup and hold timing should be referenced to the second transition edge of
the signal that terminates the write.
3. TWR is measured from the earlier of CE or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase
to the outputs must not be applied.
5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE
transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL
).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of
opposite phase to the outputs must not be applied to them.
10. Transition is measured
500mV from steady state with CL = 5pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
11. TCW is measured from the later of CE going low to the end of write.
±
相關(guān)PDF資料
PDF描述
BS62UV256PC Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62UV256PI 1-Line to 10-Line 3.3V Clock Driver with Tri-State Outputs 24-SSOP 0 to 70
BSC034N03LSCG 22 A, 30 V, 0.0051 ohm, N-CHANNEL, Si, POWER, MOSFET
BSC084P03NS3G 14.9 A, 30 V, 0.0084 ohm, P-CHANNEL, Si, POWER, MOSFET
BSF030NE2LQ 24 A, 25 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BS-632-1 制造商:PennEngineering (PEM) 功能描述:
BS6322 制造商:n/a 功能描述:Ships in 2 days
BS-632-2 制造商:PennEngineering (PEM) 功能描述:
BS640GBC3V 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
BS640GBC4V 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory