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參數(shù)資料
| 型號： | BS108AMO |
| 英文描述： | Fast Recovery Glass Passivated Rectifier Diodes |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直|毫安（?。﹟對92VAR |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 137K |
| 代理商： | BS108AMO |
相關PDF資料 |
PDF描述 |
|---|---|
| BS108ZL1 | Fast Recovery Glass Passivated Rectifier Diodes |
| BS108 | N-channel enhancement mode vertical D-MOS transistor(N通道增強型垂直DMOS 晶體管) |
| BS1501-7R | RP Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 05V; Output Voltage (Vdc): 3.3V; Power: 1W; Pot-Core Transformer - separated windings; High 5.2kVDC Isolation in compact size; Optional Continuous Short Circuit Protected; Pin Compatible with RH & RK Series; Approved for Medical Applications; UL and EN Safety Approvals; Efficiency to 82% |
| BS1001-7R | 100 Watt DC-DC Converters |
| BS2540-7R | 100 Watt DC-DC Converters |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BS108G | 功能描述:MOSFET 200V 250mA Logic Level N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS108ZL1 | 功能描述:MOSFET 200V 250mA Logic RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS108ZL1G | 功能描述:MOSFET 200V 250mA Logic Level N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS109 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:DMOS Transistors (N-Channel) |
| BS109-SM | 制造商:Panasonic Industrial Company 功能描述:SERVICE MANUAL |
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