參數(shù)資料
型號: BS108AMO
英文描述: Fast Recovery Glass Passivated Rectifier Diodes
中文描述: 晶體管| MOSFET的| N溝道| 200伏五(巴西)直|毫安(?。﹟對92VAR
文件頁數(shù): 1/4頁
文件大?。?/td> 137K
代理商: BS108AMO
相關(guān)PDF資料
PDF描述
BS108ZL1 Fast Recovery Glass Passivated Rectifier Diodes
BS108 N-channel enhancement mode vertical D-MOS transistor(N通道增強(qiáng)型垂直DMOS 晶體管)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BS108G 功能描述:MOSFET 200V 250mA Logic Level N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BS108ZL1 功能描述:MOSFET 200V 250mA Logic RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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