參數(shù)資料
型號： BS107A
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： INDUCTOR,TOROID,HORIZONTAL, 22.0 uH,7.0 IDC,0.015 OHM,
中文描述： 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝： PLASTIC, SC-43, 3 PIN
文件頁數(shù)： 4/8頁
文件大?。?/td> 49K
代理商： BS107A
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BS107A
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Drain-source breakdown voltage
I
D
= 10
μ
A; V
GS
= 0
Drain-source leakage current
V
DS
= 130 V; V
GS
= 0
Gate-source leakage current
V
GS
= 15 V; V
DS
= 0
Gate threshold voltage
I
D
= 1 mA; V
DS
= V
GS
V
(BR)DSS
min.
200 V
I
DSS
max.
30 nA
I
GSS
max.
10 nA
min.
max.
1.0
3.0
V
V
V
GS(th)
Drain-source ON-resistance
I
D
= 250 mA; V
GS
= 10 V
typ.
max.
4.5
6.4
R
DSon
I
D
= 100 mA; V
GS
= 10 V
R
DSon
typ.
max.
4.2
6.0
Transfer admittance
I
D
= 250 mA; V
DS
= 25 V
min.
typ.
200
350
mS
mS
y
fs
Input capacitance at f = 1 MHz
V
DS
= 25 V; V
GS
= 0
Output capacitance at f = 1 MHz
V
DS
= 25 V; V
GS
= 0
Feedback capacitance at f = 1 MHz
V
DS
= 25 V; V
GS
= 0
Switching times (see Figs 2 and 3)
I
D
= 250 mA; V
DD
= 50 V; V
GS
= 0 to 10 V
C
iss
typ.
45 pF
C
oss
typ.
15 pF
C
rss
typ.
3.5 pF
t
on
t
off
typ.
typ.
5
15
ns
ns
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相關代理商/技術參數(shù)
參數(shù)描述
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