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參數(shù)資料
| 型號(hào)： | BRY61 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 單結(jié)晶體管 |
| 英文描述： | Programmable Unijunction Transistor(可編程單結(jié)型晶體管) |
| 中文描述： | PROGRAMMABLE UJT |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 56K |
| 代理商： | BRY61 |
1999 Apr 27
3
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY61
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
2
1
6
TYP.
MAX.
UNIT
μ
A
μ
A
μ
A
μ
A
V
nA
nA
V
V
I
P
peak point current
V
S
= 10 V; R
G
= 10 k
; (see Fig.7)
V
S
= 10 V; R
G
= 100 k
; (see Fig.7)
V
S
= 10 V; R
G
= 10 k
; (see Fig.7)
V
S
= 10 V; R
G
= 100 k
; (see Fig.7)
typical curve; I
A
= 0; (see Fig.7)
I
K
= 0; V
GA
= 70 V; (see Fig.5)
V
AK
= 0; V
KG
= 70 V; (see Fig.6)
I
A
= 100 mA
V
AA
= 20 V; C = 10 nF;
(see Figs 8 and 9)
V
AA
= 20 V; C = 10 nF; (see Fig.9)
V
P
V
S
0.2
0.06
10
100
1.4
I
V
valley point current
V
offset
I
GAO
I
GKS
V
AK
V
OM
offset voltage
gate-anode leakage current
gate-cathode leakage current
anode-cathode voltage
peak output voltage
t
r
rise time
80
ns
Fig.2 Measuring circuit for peak and valley point currents.
I
P
and I
V
determined by value of R1.
1
I
A
; i.e. maximum voltage drop over R1 = 1 V.
Internal resistance of oscilloscope = 10 M
.
R1
----
=
handbook, full pagewidth
MBK189
40 K
R1
1 nF
20
10 k
5 k
100
μ
F
+
40 V
BZY88-
C8V2
BY206
(2x)
750
D.U.T
osc.
RG
VS
A
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