參數(shù)資料
型號: BRY61
廠商: NXP SEMICONDUCTORS
元件分類: 單結(jié)晶體管
英文描述: Programmable Unijunction Transistor(可編程單結(jié)型晶體管)
中文描述: PROGRAMMABLE UJT
文件頁數(shù): 2/8頁
文件大?。?/td> 56K
代理商: BRY61
1999 Apr 27
2
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY61
DESCRIPTION
Planar PNPN trigger device in a
SOT23 plastic package.
APPLICATIONS
Switching applications such as:
– Motor control
– Oscillators
– Relay replacement
– Timers
– Pulse shapers, etc.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE
(1)
A5
BRY61
PINNING
PIN
DESCRIPTION
1
2
3
anode
cathode
gate
Fig.1 Simplified outline SOT23 and symbol.
handbook, halfpage
MGL167
g
gate
k
cathode
anode
a
handbook, 2 columns
2
1
3
MGC421
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
GA
I
A(AV)
I
ARM
I
ASM
dl
A
/dt
P
tot
T
stg
T
j
T
amb
gate-anode voltage
average anode current
repetitive peak anode current
non-repetitive peak anode current t
p
= 10
μ
s
rate of rise of anode current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
65
65
70
175
2.5
3
20
250
+150
150
+150
V
mA
A
A
A/
μ
s
mW
°
C
°
C
°
C
t
p
= 10
μ
s;
δ
= 0.01
1
A
2.5 A
T
amb
25
°
C
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