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參數(shù)資料
| 型號： | BR101 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 開關 |
| 英文描述： | Silicon controlled switch |
| 中文描述： | SILICON CONTROLLED SWITCH, TO-72 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 58K |
| 代理商： | BR101 |
1997 Jul 24
3
Philips Semiconductors
Product specification
Silicon controlled switch
BR101
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
It is permitted to exceed this voltage during the discharge of a capacitor of max. 390 pF, provided the charge does
not exceed 50 nC.
Provided the I
E
rating is not exceeded.
2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
V
CBO
V
CER
V
EBO
I
C
I
CM
I
E
I
ERM
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
emitter current (DC)
repetitive peak emitter current
open emitter
R
BE
= 10 k
open collector; note 1
note 2
50
50
5
175
175
175
2.5
V
V
V
mA
mA
mA
A
t
p
= 10
μ
s;
δ
= 0.01
PNP transistor
V
CBO
V
CEO
V
EBO
I
E
I
ERM
collector-base voltage
collector-emitter voltage
emitter-base voltage
emitter current (DC)
repetitive peak emitter current
open emitter
open base
open collector
50
50
50
175
2.5
V
V
V
mA
A
t
p
= 10
μ
s;
δ
= 0.01
Combined device
P
tot
T
stg
T
j
T
amb
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°
C
65
65
275
+150
150
+150
mW
°
C
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
0.45
K/mW
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| BR1010-G | 功能描述:橋式整流器 DIODE RECT BRIDGE 10A 1000V RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
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