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參數(shù)資料
| 型號(hào)： | BQ4010Y |
| 英文描述： | Avalanche Bridge Rectifiers |
| 中文描述： | 8Kx8非易失SRAM |
| 文件頁(yè)數(shù)： | 2/13頁(yè) |
| 文件大?。?/td> | 450K |
| 代理商： | BQ4010Y |
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Functional Description
When power is valid, the bq4013/Y operates as a stan-
dard CMOS SRAM. During power-down and power-up
cycles, the bq4013/Y acts as a nonvolatile memory, auto-
matically protecting and preserving the memory con-
tents.
Power-down/power-up control circuitry constantly moni-
tors the V
CC
supply for a power-fail-detect threshold
V
PFD
. The bq4013 monitors for V
PFD
= 4.62V typical for
use in systems with 5% supply tolerance. The bq4013Y
monitors for V
PFD
= 4.37V typical for use in systems
with 10% supply tolerance.
When V
CC
falls below the V
PFD
threshold, the SRAM au-
tomatically write-protects the data. All outputs become
high impedance, and all inputs are treated as “don’t
care.”
If a valid access is in process at the time of
power-fail detection, the memory cycle continues to com-
pletion. If the memory cycle fails to terminate within
time t
WPT
,write-protection takes place.
As V
CC
falls past V
PFD
and approaches 3V, the control
circuitry switches to the internal lithium backup supply,
which provides data retention until valid V
CC
is applied.
When V
CC
returns to a level above the internal backup
cell voltage, the supply is switched back to V
CC
. After
V
CC
ramps above the V
PFD
threshold, write-protection
continues for a time t
CER
(120ms maximum) to allow for
processor stabilization. Normal memory operation may
resume after this time.
The internal coin cell used by the bq4013/Y has an ex-
tremely long shelf life and provides data retention for
more than 10 years in the absence of system power.
As shipped from Unitrode, the integral lithium cell of
the MA-type module is electrically isolated from the
memory. (Self-discharge in this condition is approxi-
mately 0.5% per year.) Following the first application of
V
CC
, this isolation is broken, and the lithium backup cell
provides data retention on subsequent power-downs.
2
bq4013/Y
OE
CE
BD-42
WE
Power
Lithium
Cell
Power-Fail
Control
128K x 8
SRAM
Block
CE
CON
V
CC
A
0
–A
16
DQ
0
–DQ
7
Block Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BQ4015YMB-85N | Avalanche Bridge Rectifiers |
| BQ4015MB-120 | Avalanche Bridge Rectifiers |
| BQ4015MB-85 | Avalanche Bridge Rectifiers |
| BQ4015YMB-120 | Avalanche Bridge Rectifiers |
| BQ4015YMB-120N | Avalanche Bridge Rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BQ4010Y-150 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:8Kx8 Nonvolatile SRAM |
| BQ4010Y-200 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:8Kx8 Nonvolatile SRAM |
| BQ4010Y-70 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:8Kx8 Nonvolatile SRAM |
| BQ4010Y-85 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:8Kx8 Nonvolatile SRAM |
| BQ4010YMA-150 | 功能描述:NVRAM 8Kx8 Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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