參數(shù)資料
型號: BPW41N
英文描述: Silicon PIN Photodiode
中文描述: 硅PIN光電二極管
文件頁數(shù): 3/5頁
文件大?。?/td> 99K
代理商: BPW41N
BPW41N
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
3 (5)
0.01
0.1
1
0.1
1
10
100
1000
I
r
E
e
– Irradiance ( mW/cm
2
)
10
94 8414
V
R
=5V
=950nm
Figure 3. Reverse Light Current vs. Irradiance
0.1
1
10
1
10
100
V
R
– Reverse Voltage ( V )
100
94 8415
I
r
1mW/cm
2
0.5mW/cm
2
0.2mW/cm
2
0.1mW/cm
2
0.05mW/cm
2
0.02mW/cm
2
=950nm
Figure 4. Reverse Light Current vs. Reverse Voltage
0.1
1
10
0
20
40
60
80
C
D
V
R
– Reverse Voltage ( V )
100
94 8407
E=0
f=1MHz
Figure 5. Diode Capacitance vs. Reverse Voltage
750
850
950
1050
0
0.2
0.4
0.6
0.8
1.2
S
r
– Wavelength ( nm )
1150
94 8408
1.0
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0.4
0.2
0
0.2
0.4
S
r
0.6
94 8406
0.6
0.9
0.8
0
°
30
°
10
°
20
°
40
°
50
°
60
°
70
°
80
°
0.7
1.0
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
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