參數(shù)資料
型號(hào): BPW41N
英文描述: Silicon PIN Photodiode
中文描述: 硅PIN光電二極管
文件頁數(shù): 2/5頁
文件大?。?/td> 99K
代理商: BPW41N
BPW41N
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
2 (5)
Basic Characteristics
T
amb
= 25 C
Parameter
Test Conditions
I
R
= 100 A, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
E
e
= 1 mW/cm
2
, = 950 nm
E
e
= 1 mW/cm
2
, = 950 nm
E
e
= 1 mW/cm
2
, = 950 nm
E
e
= 1 mW/cm
2
, = 950 nm
E
e
= 1 mW/cm
2
, = 950 nm,
V
R
= 5 V
Symbol
V
(BR)
I
ro
C
D
C
D
V
o
TK
Vo
I
k
TK
Ik
I
ra
Min
60
Typ
Max
Unit
V
nA
pF
pF
mV
mV/K
A
%/K
A
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
2
70
25
350
–2.6
38
0.1
45
30
40
Open Circuit Voltage
Temp. Coefficient of V
o
Short Circuit Current
Temp. Coefficient of I
k
Reverse Light Current
43
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
Fall Time
±
65
950
deg
nm
nm
p
0.5
870...1050
4x10
–14
100
100
V
R
=10V, =950nm
V
R
=10V, R
L
=1k , =820nm
V
R
=10V, R
L
=1k , =820nm
NEP
t
r
t
f
W/
Hz
ns
ns
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
20
40
60
80
1
10
100
1000
I
r
T
amb
– Ambient Temperature (
°
C )
100
94 8403
V
R
=10V
Figure 1. Reverse Dark Current vs. Ambient Temperature
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0.6
0.8
1.0
1.2
1.4
I
r
100
94 8409
V
R
=5V
=950nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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