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參數(shù)資料
| 型號： | BLW89 |
| 英文描述： | RF Power Transistors for UHF |
| 中文描述： | 射頻功率晶體管的超高頻 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 27K |
| 代理商： | BLW89 |
1996 Feb 12
2
Philips Semiconductors
RF Power Transistors for UHF
Line-ups
INTRODUCTION
In this section, we present information on recommended circuit line-ups in the main RF power application areas.
A comprehensive range of output power levels is indicated, together with our recommended types in the particular line-up
configuration. The necessary drive power level for each line-up is indicated in the first column.
More detailed application information can be found in the application reports book “Bipolar and MOS Transmitting
Transistors”
AM AIRCRAFT TRANSMITTERS (100 to 400 MHz)
Bipolar
PowerMOS
Note
1.
V
DS
= 12.5 V.
PORTABLE and MOBILE TRANSMITTERS (400 to 512 MHz)
Bipolar
INPUT
POWER
(mW)
1
st
STAGE
2
nd
STAGE
3
rd
STAGE
P
L(carr)
(W)
V
CE
(V)
S = stud
F = flange
40
60
500
BLW89
BLW89
BLW90
2
×
BLW90
2
×
BLW91
2
×
BLX94C
2
×
BLX94C
2
×
BLU60/28
2
×
BLU60/28
40
60
120
28
28
28
S
S/F
S/F
INPUT
POWER
(mW)
1
st
STAGE
2
nd
STAGE
3
rd
STAGE
P
L(carr)
(W)
V
CE
(V)
30
25
30
100
BLF521
(1)
BLF521
(1)
BLF521
(1)
BLF521
(1)
BLF522
(1)
BLF543
BLF543
BLF544
BLF545
BLF546
BLF547
BLF548
40
80
100
150
28
28
28
28
INPUT
POWER
(mW)
1
st
STAGE
2
nd
STAGE
3
rd
STAGE
P
L
(W)
V
CE
(V)
45
15
400
280
400
BLV90
BFR96S
BLU99
BLU99
BLU99
BLU99
BLU99
BLU20/12
BLU20/12
BLU20/12
3
10
20
45
60
7.5
13
BLW81
BLU45/12
BLU60/12
13
13
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BLW898 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF linear power transistor |
| BLW90 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLW91 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
| BLW96 | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLW96/01,112 | 功能描述:射頻雙極電源晶體管 Dual N-CH 340W 10mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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