參數(shù)資料
型號(hào): BLW85
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: HF/VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-123A, 4 PIN
文件頁(yè)數(shù): 8/15頁(yè)
文件大?。?/td> 109K
代理商: BLW85
March 1993
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
Fig.9
Typical values; f = 175 MHz;
V
CE
= 12,5 V; - - - V
CE
= 13,5 V.
handbook, halfpage
PL
(W)
0
0
10
30
75
25
50
MGP617
20
PS (W)
Th = 25
°
C
Th = 70
°
C
Fig.10 Typical values; f = 175 MHz ;T
h
= 25
°
C;
V
CE
= 12,5 V; - - - V
CE
= 13,5 V.
handbook, halfpage
10
30
50
Gp
(dB)
0
5
100
η
(%)
0
50
MGP618
PL (W)
η
Gp
Fig.11 R.F. SOAR; (short-time operation during
mismatch); f = 175 MHz; T
h
= 70
°
C;
R
th mb-h
= 0,3 K/W ;
V
CEnom
= 12,5 V or 13,5 V; P
S
= P
Snom
at
V
CEnom
and VSWR =1 measured in the
circuit of Fig.7.
handbook, halfpage
PLnom
(W)
(VSWR = 1)
1
1.1
1.2
1.3
50
30
40
MGP619
20
50
VCE
VCEnom
VSWR =
4
10
5
PS
PSnom
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
The graph applies to the situation in which the drive
(P
S
/P
Snom
) increases linearly with supply over-voltage
ratio.
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