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參數(shù)資料
| 型號： | BLW85 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁數(shù)： | 6/15頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BLW85 |
March 1993
6
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T
h
= 25
°
C
List of components:
f (MHz)
V
CE
(V)
12,5
13,5
P
L
(W)
45
45
P
S
(W)
<
16
G
p
(dB)
>
4,5
typ. 6,0
I
C
(A)
<
4,8
η
(%)
>
75
typ. 75
z
i
(
)
1,4
+
j1,5
Z
L
(
)
2,7
j1,3
175
175
C1
C2
C3a =
C4
C5
C6a =
C7
L1
L2
L3
L4
L6
L7
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1
=
10
(
±
10%) carbon resistor (0,25 W)
R2
=
4,7
(
±
5%) carbon resistor (0,25 W)
Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8.
=
=
2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3b = 47 pF ceramic capacitor (500 V)
120 pF ceramic capacitor (500 V)
100 nF polyester capacitor
C6b = 8,2 pF ceramic capacitor (500 V)
5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
1 turn Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2
×
5 mm
100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2
×
5 mm
L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L5 = strip (12 mm
×
6 mm); taps for C3a and C3b at 5 mm from transistor
2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2
×
5 mm
2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2
×
5 mm
=
=
=
=
=
=
=
=
=
Fig.7 Test circuit; c.w. class-B.
handbook, full pagewidth
C7
50
50
MGP604
C1
C2
C3b
C3a
C6a
C4
C5
R2
L3
C6b
C8
L1
L2
L4
R1
L5
L7
T.U.T.
L6
L8
+
VCC
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參數(shù)描述 |
|---|---|
| BLW86 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW87 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW89 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
| BLW898 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF linear power transistor |
| BLW90 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
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