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參數(shù)資料
| 型號： | BLW76 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-121B, 4 PIN |
| 文件頁數(shù)： | 9/15頁 |
| 文件大?。?/td> | 90K |
| 代理商： | BLW76 |
August 1986
9
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
Fig.13 Power gain as a function of frequency.
handbook, halfpage
Gp
(dB)
20
10
0
30
MGP510
1
10
10
2
f (MHz)
V
CE
= 28 V; I
= 50 mA; P
= 80 W; T
h
= 25
°
C;
Z
L
= 3,9
; neutralizing capacitor: 68 pF.
Fig.14 Input impedance (series components) as a
function of frequency.
handbook, halfpage
ri
(
)
10
5
0
15
MGP511
1
10
10
2
xi
(
)
f (MHz)
2.5
2.5
5
7.5
0
xi
ri
V
CE
= 28 V; I
= 50 mA; P
= 80 W; T
h
= 25
°
C;
Z
L
= 3,9
; neutralizing capacitor: 68 pF.
Figs 13 and 14 are typical curves and hold for a push-pull
amplifier with cross-neutralization in s.s.b. class-AB
operation.
Fig.15 R.F. SOAR; s.s.b. class-AB operation;
f
1
= 28,000 MHz; f
2
= 28,001 MHz;
V
CE
= 28 V; R
th mb-h
= 0,2 K/W.
The graph shows the permissible output
power under nominal conditions (VSWR = 1)
as a function of the expected VSWR during
short-time mismatch conditions with heatsink
temperatures as parameter.
handbook, halfpage
100
50
MGP512
1
10
10
2
PLnom
(W P.E.P.)
(VSWR = 1)
90
°
C
70
°
C
Th
≤
50
°
C
VSWR
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相關代理商/技術(shù)參數(shù) |
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|---|---|
| BLW77 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW78 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HF/VHF power transistor |
| BLW80 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLW81 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLW83 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HF/VHF power transistor |
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