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參數(shù)資料
| 型號： | BLW76 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-121B, 4 PIN |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 90K |
| 代理商： | BLW76 |
August 1986
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
1.
Stated intermodulation distortion figures are referred
to the according level of either of the equal amplified
tones. Relative to the according peak envelope
powers these figures should be increased by 6 dB.
Fig.9
Intermodulation distortion as a function of
output power.
(1.)
handbook, halfpage
0
50
100
50
40
30
MGP506
d3, d5
(dB)
P.E.P. (W)
d3
d5
V
CE
= 28 V; I
= 50 mA; f
= 28,000 MHz;
f
2
= 28,001 MHz; T
h
= 25
°
C; typical values.
Fig.10 Double-tone efficiency and power gain as a
function of output power.
handbook, halfpage
0
50
100
0
20
40
30
0
10
20
MGP507
P.E.P. (W)
η
dt
(%)
Gp
(dB)
Gp
η
dt
V
CE
= 28 V; I
= 50 mA; f
= 28,000 MHz;
f
2
= 28,001 MHz; T
h
= 25
°
C; typical values.
Fig.11 Power gain as a function of frequency.
handbook, halfpage
Gp
(dB)
20
10
0
30
MGP508
1
10
10
2
f (MHz)
V
CE
= 28 V; I
= 50 mA; P
L
= 80 W;
T
h
25
°
C; Z
L
= 3,9
.
Figs 11 and 12 are typical curves and hold for an
unneutralized amplifier in s.s.b. class-AB operation.
Fig.12 Input impedance (series components) as a
function of frequency.
handbook, halfpage
ri
(
)
5
2.5
0
7.5
MGP509
1
10
10
2
2.5
2.5
5
7.5
0
xi
(
)
f (MHz)
xi
ri
V
CE
= 28 V; I
= 50 mA; P
L
= 80 W;
T
h
25
°
C; Z
L
= 3,9
.
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