參數(shù)資料
型號: BLV909
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: RM Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 3.3V; Output Voltage (Vdc): 12V; Power: 0.25W; Single Output Rail; Industry Standard Pinout; 1kVDC & 2kVDC Isolation; High Efficiency for Low Power Applications; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Efficiency to 80%; Custom versions available
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù): 6/16頁
文件大?。?/td> 122K
代理商: BLV909
1999 Jun 25
6
Philips Semiconductors
Product specification
UHF power transistor
BLV909
Fig.8
Peak envelope load power as a function of
drive power; typical values.
V
CE
= 26 V; I
CQ
= 25 mA; f
1
= 960 MHz; f
2
= 960.1 MHz.
handbook, halfpage
0
4
0
0.2
1.8
8
0.4
0.6
MGG305
PD (PEP) (W)
PL (PEP)
(W)
Fig.9
Power gain and efficiency as functions of
peak envelope load power; typical values.
V
CE
= 26 V; I
CQ
= 25 mA; f
1
= 960 MHz; f
2
= 960.1 MHz.
handbook, halfpage
Gp
(dB)
0
2
8
6
4
10
MGG306
4
0
12
8
Gp
PL (PEP) (W)
η
C
(%)
η
C
80
0
20
60
40
Fig.10 Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
V
CE
= 26 V; f
1
= 960 MHz; f
2
= 960.1 MHz.
handbook, halfpage
0
4
8
12
MGG307
40
50
30
PL (PEP) (W)
d3
(dBc)
60 mA
40 mA
10 mA
ICQ = 25 mA
Fig.11 Intermodulation distortion as a function of
peak envelope load power; typical values.
V
CE
= 26 V; I
CQ
= 25 mA; f
1
= 960 MHz; f
2
= 960.1 MHz.
handbook, halfpage
0
4
8
12
MGG308
40
50
30
d3
d5
d7
PL (PEP) (W)
dim
(dBc)
相關(guān)PDF資料
PDF描述
BLV90 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
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