參數(shù)資料
型號(hào): BLV909
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: RM Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 3.3V; Output Voltage (Vdc): 12V; Power: 0.25W; Single Output Rail; Industry Standard Pinout; 1kVDC & 2kVDC Isolation; High Efficiency for Low Power Applications; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Efficiency to 80%; Custom versions available
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù): 5/16頁(yè)
文件大小: 122K
代理商: BLV909
1999 Jun 25
5
Philips Semiconductors
Product specification
UHF power transistor
BLV909
APPLICATION INFORMATION
RF performance at T
mb
= 25
°
C in a common emitter test circuit (see Figs 12 and 13).
Ruggedness in class-AB operation
The BLV909 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the
following conditions: f = 960 MHz; V
CE
= 26 V; I
CQ
= 25 mA; T
mb
= 25
°
C.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
p
(dB)
η
C
(%)
d
im
(dBc)
typ.
30
CW, class-AB
2-tone, class-AB
960
26
26
25
25
9
9.5, typ. 11.5
9.5, typ. 11.5
50, typ. 55
35, typ. 40
f
1
= 960; f
2
= 960.1
9 (PEP)
Fig.6
Power gain and collector efficiency as
functions of load power; typical values.
handbook, halfpage
Gp
(dB)
0
4
8
12
MGG304
4
0
12
8
PL (W)
80
0
20
60
40
Gp
η
C
(%)
η
C
V
CE
= 26 V; I
CQ
= 25 mA; f = 960 MHz.
Fig.7
Load power as a function of drive power;
typical values.
V
CE
= 26 V; I
CQ
= 25 mA; f = 960 MHz.
handbook, halfpage
PL
(W)
0
12
4
0
0.4
1.6
8
0.8
1.2
MGG303
PD (W)
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