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參數(shù)資料
| 型號： | BLV897 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF push-pull power transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-324B, 5 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 101K |
| 代理商： | BLV897 |
1997 Nov 10
3
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Total device; both sections equally loaded.
THERMAL CHARACTERISTICS
Note
1.
Total device; both sections equally loaded.
CHARACTERISTICS
Values apply to either transistor section; T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
open emitter
open base
open collector
65
70
30
3
5
5
97
+
150
200
V
V
V
A
A
W
°
C
°
C
T
mb
= 25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink note 1
P
tot
= 97 W; note 1
1.79
0.4
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
18
MAX.
1.5
120
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
c
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
collector capacitance
I
C
= 15 mA; I
E
= 0
I
C
= 30 mA; I
B
= 0
I
E
= 0.6 mA; I
C
= 0
V
CB
= 28 V; V
BE
= 0
V
CE
= 10 V; I
C
= 1 A
V
CB
= 24 V; I
E
= i
e
= 0; f = 1 MHz
70
30
3
30
V
V
V
mA
pF
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