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參數(shù)資料
| 型號(hào)： | BLV897 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF push-pull power transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-324B, 5 PIN |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | BLV897 |
1997 Nov 10
2
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
FEATURES
Internal input matching for an optimum wideband
capability and high gain
Polysilicon emitter ballasting resistors for an optimum
temperature profile
Gold metallization ensures excellent reliability.
APPLICATIONS
Common emitter class-AB operation in base stations in
the 800 to 960 MHz frequency band.
DESCRIPTION
NPN silicon planar transistor with two sections in push-pull
configuration. The device is encapsulated in a SOT324B
4-lead rectangular flange package with a ceramic cap.
The common emitters are connected to the flange.
PINNING - SOT324B
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
c1
c2
b1
b2
e
collector 1
collector 2
base 1
base 2
common emitters connected to
flange
handbook, halfpage
1
2
5
3
4
MAM217
Top view
c1
b1
b2
c2
e
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common emitter push-pull test circuit.
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
2
×
80
2
×
80
P
L
(W)
G
p
(dB)
≥
10
≥
11
η
C
(%)
≥
45
≥
35
d
3
(dBc)
CW, class-AB
2-tone, class-AB
900
900
24
24
30
30 (PEP)
<
32; typ.
37
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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