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參數(shù)資料
| 型號(hào)： | BLV857 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管) |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-324B, 5 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 138K |
| 代理商： | BLV857 |
1997 Jan 16
5
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter push-pull class-A test circuit.
Notes
1.
Three-tone test method: f
vision
= 855.25 MHz (vision carrier
8 dB); f
sound
= 860.75 MHz (sound carrier
10 dB);
f
sideband
= 859.68 MHz (sideband signal
16 dB); 0 dB corresponds to peak sync level.
Three-tone test method: f
vision
= 855.25 MHz (vision carrier
8 dB); f
sound
= 860.75 MHz (sound carrier
7 dB);
f
sideband
= 859.68 MHz (sideband signal
16 dB); 0 dB corresponds to peak sync level.
2.
Ruggedness in class-A operation
The BLV857 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
conditions: V
CE
= 25 V; I
CQ
= 2
×
1.1 A; f = 860 MHz; T
h
= 25
°
C; P
o sync
= 10 W.
MODE OF OPERATION
f
(MHz)
860
860
V
CE
(V)
25
25
I
CQ
(A)
P
o sync
(W)
≥
10
(1)
≥
10
(2)
G
p
(dB)
≥
10
(1)
≥
10
(2)
d
im
(dB)
≤
54
(1)
≤
51
(2)
CW class-A
CW class-A
2
×
1.1
2
×
1.1
Fig.5
Output power as a function of input power;
typical values.
V
CE
= 25 V; I
CQ
= 2
×
1.1 A; f = 860 MHz; (3-tone;
8/
16/
10 dB).
(1) T
h
= 25
°
C.
(2) T
h
= 70
°
C.
handbook, halfpage
(W)
0
2
40
30
10
0
20
4
6
Pi sync (W)
MBH757
(1)
(2)
Fig.6
Power gain as a function of output power;
typical values.
V
CE
= 25 V; I
CQ
= 2
×
1.1 A; f = 860 MHz; (3-tone;
8/
16/
10 dB).
(1) T
h
= 25
°
C.
(2) T
h
= 70
°
C.
handbook, halfpage
(dB)
0
20
12
10
6
8
40
60
Po sync (W)
MBH758
(1)
(2)
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