參數(shù)資料
型號(hào)： BLV857
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管)
中文描述： 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CERAMIC, SOT-324B, 5 PIN
文件頁(yè)數(shù)： 4/12頁(yè)
文件大?。?/td> 138K
代理商： BLV857
1997 Jan 16
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
CHARACTERISTICS
Values apply to either transistor section; T
j
= 25
°
C unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE
C
c
PARAMETER
CONDITIONS
MIN.
60
28
2.5
30
TYP.
18
MAX.
1.5
3
140
UNIT
V
V
V
mA
mA
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
collector-emitter leakage current
DC current gain
collector capacitance
I
C
= 15 mA; I
E
= 0
I
C
= 30 mA; I
B
= 0
I
E
= 0.6 mA; I
C
= 0
V
CB
= 27 V; V
BE
= 0
V
CE
= 20 V
V
CE
= 25 V; I
C
= 1.1 A; see Fig.3
V
CB
= 25 V; I
E
= i
e
= 0; f = 1 MHz;
see Fig.4
V
CE
= 25 V; I
C
= 0; f = 1 MHz
pF
C
re
feedback capacitance
11
pF
Fig.3
DC current gain as a function of collector
current; typical values.
V
CE
= 25 V; t
p
= 500
μ
s;
δ
= <1 %.
handbook, halfpage
0
1
hFE
120
40
0
80
2
3
Ic (A)
MBH756
Fig.4
Collector capacitance as a function of
collector-base voltage; typical values.
I
E
= i
e
= 0; f = 1 MHz.
handbook, halfpage
Cc
(pF)
0
10
30
10
0
20
20
30VCB (V)40
MBH755
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