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參數(shù)資料
| 型號： | BLV59 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF linear power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 104K |
| 代理商： | BLV59 |
1998 Jan 09
4
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
T
mb
= 25
°
C, P
tot
= 50 W
VALUE
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
2.3
0.4
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
44
30
2
MAX.
10
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
E
(SBR)
h
FE
C
c
C
re
C
cf
collector-base breakdown voltage
collector-emitter breakdown voltage open base; I
C
= 100 mA
emitter-base breakdown voltage
collector leakage current
second breakdown energy
DC current gain
collector capacitance
feedback capacitance
collector-flange capacitance
open emitter; I
C
= 50 mA
50
27
3.5
V
V
V
mA
mJ
open collector; I
E
= 10 mA
V
CE
= 27 V; V
BE
= 0
L = 25 mH; f = 50 Hz; R
BE
= 10
4
V
CE
= 24 V; I
C
= 2 A
V
CB
= 25 V; I
E
= i
e
= 0; f = 1 MHz
V
CE
= 25 V; I
C
= 0; f = 1 MHz
15
pF
pF
pF
Fig.4
DC current gain as a function of collector
current; typical values.
handbook, halfpage
0
4
8
0
50
MGP381
hFE
VCE = 25 V
20 V
IC (A)
T
j
= 25
°
C.
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values
handbook, halfpage
0
10
20
30
0
50
MGP382
Cc
(pF)
VCB (V)
I
E
= i
e
= 0; f = 1 MHz.
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