參數(shù)資料
型號： BLV59
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF linear power transistor
中文描述： UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CERAMIC, SOT-171A, 6 PIN
文件頁數(shù)： 3/12頁
文件大?。?/td> 104K
代理商： BLV59
1998 Jan 09
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
I
CM
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
peak collector current
total power dissipation
storage temperature
operating junction temperature
open emitter
open base
open collector
65
50
27
3.5
3
3
9
70
+150
200
V
V
V
A
A
A
W
°
C
°
C
f
>
1 MHz
T
mb
= 25
°
C; f
>
1 MHz
Fig.2 DC SOAR.
handbook, halfpage
MGP379
1
10
1
1
10
10
2
IC
(A)
VCE (V)
Tamb = 25
°
C
Th = 70
°
C
R
th mb-h
= 0.4 K/W.
(1) Continuous operation (f
>
1 MHz).
(2) Short-time operation during mismatch (f
>
1 MHz).
Fig.3
Power/temperature derating curves.
handbook, halfpage
0
200
0
MGP380
50
100
Ptot
(W)
Th (
°
C)
(2)
(1)
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