參數(shù)資料
型號: BLV58
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管)
中文描述: 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-289A, 5 PIN
文件頁數(shù): 4/13頁
文件大?。?/td> 109K
代理商: BLV58
September 1991
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
THERMAL RESISTANCE
Note
1.
Total device, both sections equally loaded.
CHARACTERISTICS
Values apply to either transistor section; T
j
= 25
°
C.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb(DC)
from junction to mounting base
P
dis
= 87 W;
T
mb
= 70
°
C
(note 1)
note 1
1.5
K/W
R
th mb-h
from mounting base to heatsink
0.2
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V
(BR)CBO
collector-base breakdown voltage
open emitter;
I
C
= 20 mA
open base;
I
C
= 50 mA
open collector;
I
E
= 10 mA
V
BE
= 0;
V
CE
= 27 V
V
CE
= 25 V;
I
C
= 1.6 A
V
CB
= 25 V;
I
E
= I
e
= 0;
f = 1 MHz
50
V
V
(BR)CEO
collector-emitter breakdown voltage
27
V
V
(BR)EBO
emitter-base breakdown voltage
3.5
V
I
CES
collector-emitter leakage current
10
mA
h
FE
DC current gain
30
C
c
collector capacitance
36
45
pF
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