參數(shù)資料
型號: BLV58
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管)
中文描述: 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-289A, 5 PIN
文件頁數(shù): 11/13頁
文件大?。?/td> 109K
代理商: BLV58
September 1991
11
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
Fig.12 Input impedance per section (series
components) as a function of frequency,
typical values.
Class-A operation; V
= 25 V;
I
CQ
= 1.6 A (per section); P
L
= 25 W (total device);
T
h
= 25
°
C.
handbook, halfpage
MRA352
0
2
4
400
500
600
700
800
900
f (MHz)
Zi
(
)
xi
ri
Fig.13 Load impedance per section (series
components) as a function of frequency,
typical values.
Class-A operation; V
= 25 V;
I
CQ
= 1.6 A (per section); P
L
= 25 W (total device);
T
h
= 25
°
C.
handbook, halfpage
MRA353
0
2
4
-1
400
500
600
700
800
900
f (MHz)
ZL
(
)
RL
XL
Fig.14 Definition of transistor impedance.
handbook, halfpage
MBA451
Zi
ZL
Fig.15 Power gain as a function of frequency,
typical values.
Class-A operation; V
= 25 V;
I
CQ
= 1.6 A (per section); P
L
= 25 W (total device);
T
h
= 25
°
C.
handbook, halfpage
MRA347
10
400
12
14
500
600
700
800
900
(dB)
f (MHz)
GP
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